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THD12G01 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
THD12G01AELTA280Yes

THD12G01** is a high-performance RF power transistor manufactured by **AELTA**.

The THD12G01 is a high-performance RF power transistor manufactured by AELTA. Below are its key specifications, descriptions, and features:

Specifications:

  • Frequency Range: 960–1215 MHz
  • Output Power (Pout): 12 W
  • Gain (Gp): 12 dB (typical)
  • Drain Efficiency (ηD): 60% (typical)
  • Supply Voltage (VDD): 28 V
  • Operating Class: AB
  • Package Type: Ceramic Metal Flange

Descriptions:

  • Designed for L-band radar and communication systems
  • Suitable for airborne and ground-based applications
  • Gallium Nitride (GaN) technology for high efficiency and power density
  • Robust construction for high-reliability operation

Features:

  • High power density in a compact package
  • Wide bandwidth for flexible system integration
  • High thermal stability for demanding environments
  • Low harmonic distortion for clean signal transmission
  • Matched input/output for simplified circuit design

This transistor is commonly used in military, aerospace, and commercial RF systems requiring high power and efficiency.

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