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THZ16N01A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
THZ16N01AAELTA4000Yes

THZ16N01A** is a power MOSFET manufactured by **AELTA**.

The THZ16N01A is a power MOSFET manufactured by AELTA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 16A
  • Pulsed Drain Current (IDM): 64A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.1Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 800pF (typ)
  • Output Capacitance (Coss): 150pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-252 (DPAK)

Description:

The THZ16N01A is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high efficiency, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching for improved efficiency
  • High current handling capability
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is commonly used in power supplies, inverters, and automotive applications. For detailed electrical characteristics, refer to the official AELTA datasheet.

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