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The THZ16N01A is a power MOSFET manufactured by AELTA. Below are its key specifications, descriptions, and features:

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 100V
• Continuous Drain Current (I_D): 16A
• Pulsed Drain Current (I_DM): 64A
• Power Dissipation (P_D): 50W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.1Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 2V (min) – 4V (max)
• Input Capacitance (C_iss): 800pF (typ)
• Output Capacitance (C_oss): 150pF (typ)
• Reverse Transfer Capacitance (C_rss): 50pF (typ)
• Turn-On Delay Time (t_d(on)): 10ns (typ)
• Turn-Off Delay Time (t_d(off)): 30ns (typ)
• Operating Temperature Range: -55°C to +150°C

Package:

• TO-252 (DPAK)

Description:

The THZ16N01A is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high efficiency, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

• Low R_DS(on) for reduced conduction losses
• Fast switching for improved efficiency
• High current handling capability
• Avalanche energy specified for ruggedness
• Lead-free and RoHS compliant

This MOSFET is commonly used in power supplies, inverters, and automotive applications. For detailed electrical characteristics, refer to the official AELTA datasheet.