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70T03GH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
70T03GHAPEC112Yes

APEC 70T03GH** is a power MOSFET transistor designed for high-performance applications.

The APEC 70T03GH is a power MOSFET transistor designed for high-performance applications. Below are its key specifications, descriptions, and features:

Manufacturer:

APEC (Advanced Power Electronics Corp.)

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 70V
  • Continuous Drain Current (ID): 75A
  • Pulsed Drain Current (IDM): 300A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.003Ω (3mΩ) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 4000pF
  • Output Capacitance (Coss): 1200pF
  • Reverse Transfer Capacitance (Crss): 300pF
  • Turn-On Delay Time (td(on)): 15ns
  • Turn-Off Delay Time (td(off)): 50ns
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-247

Description:

The 70T03GH is a high-current, low-on-resistance MOSFET optimized for power switching applications. It is commonly used in DC-DC converters, motor control, power supplies, and other high-efficiency systems.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • High current handling capability (75A continuous, 300A pulsed).
  • Robust thermal performance with a TO-247 package for heat dissipation.
  • Avalanche energy rated for enhanced reliability in harsh conditions.

This MOSFET is suitable for industrial, automotive, and power management applications where high efficiency and thermal stability are critical.

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