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AS358AP-E1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
AS358AP-E1BCD240Yes

AS358AP-E1** is a dual operational amplifier manufactured by **BCD Semiconductor (now part of Diodes Incorporated)**.

The AS358AP-E1 is a dual operational amplifier manufactured by BCD Semiconductor (now part of Diodes Incorporated). Below are its key specifications, descriptions, and features:

Specifications:

  • Supply Voltage Range: ±1.5V to ±16V (Dual Supply), 3V to 32V (Single Supply)
  • Input Offset Voltage: 2mV (Typical), 7mV (Maximum)
  • Input Bias Current: 20nA (Typical)
  • Gain Bandwidth Product (GBW): 1MHz
  • Slew Rate: 0.5V/µs
  • Common-Mode Rejection Ratio (CMRR): 70dB (Typical)
  • Operating Temperature Range: -40°C to +85°C
  • Package: 8-Pin DIP, SOIC

Descriptions:

  • The AS358AP-E1 is a low-power, high-performance dual operational amplifier.
  • Designed for general-purpose applications, it offers stable operation with a wide supply voltage range.
  • It is pin-compatible with industry-standard LM358 and LM2904 devices.

Features:

  • Low Power Consumption: Suitable for battery-powered applications.
  • Wide Supply Voltage Range: Supports both single and dual power supplies.
  • Internal Frequency Compensation: Ensures stability without external components.
  • Short-Circuit Protection: Enhanced reliability in harsh conditions.
  • Low Input Offset Voltage and Bias Current: Improves accuracy in signal conditioning.

This IC is commonly used in amplifiers, filters, signal conditioning, and sensor interface circuits.

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