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CY7C1011DV33-10ZSXI Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CY7C1011DV33-10ZSXICY 3638Yes

CY7C1011DV33-10ZSXI** is a high-performance CMOS Static RAM (SRAM) device manufactured by **Cypress Semiconductor (now Infineon Technologies)**.

The CY7C1011DV33-10ZSXI is a high-performance CMOS Static RAM (SRAM) device manufactured by Cypress Semiconductor (now Infineon Technologies). Below are the factual details about this component:

Manufacturer:

  • CY (Cypress Semiconductor, now part of Infineon Technologies)

Specifications:

  • Density: 1 Mbit (128K x 8)
  • Organization: 128K words × 8 bits
  • Supply Voltage: 3.3V (±10%)
  • Access Time: 10 ns
  • Operating Current: 25 mA (typical)
  • Standby Current: 5 µA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Package: 32-pin TSOP Type I (8mm x 20mm)
  • Pin Count: 32
  • Technology: CMOS
  • Data Retention: >20 years
  • Cycle Time: 10 ns

Descriptions:

  • The CY7C1011DV33-10ZSXI is a 3.3V, 1Mbit (128K x 8) Static RAM designed for high-speed applications.
  • It features low power consumption in both active and standby modes.
  • The device is asynchronous, meaning it does not require a clock signal for operation.
  • It is fully static, eliminating the need for refresh cycles.
  • Suitable for battery-backed, industrial, networking, and telecommunications applications.

Features:

  • High-speed access time: 10 ns
  • Low power consumption:
  • Active current: 25 mA (typical)
  • Standby current: 5 µA (typical)
  • Wide voltage range: 3.3V ±10%
  • TTL-compatible inputs and outputs
  • Automatic power-down when deselected
  • Three-state outputs
  • Industrial temperature range (-40°C to +85°C)
  • Pb-free and RoHS compliant

This SRAM is commonly used in embedded systems, networking equipment, and other high-performance memory applications.

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