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KTD-4021E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KTD-4021EChina2800Yes

Part Number:** KTD-4021E **Manufacturer:** China ### **Specifications:** - **Type:** Transistor (NPN Silicon Epitaxial Planar Type) - **Collector-Emitter Voltage (VCEO):** 30V - **Collector-Base Voltage (VCBO):** 60V - **Emitter-Base Voltag

Part Number: KTD-4021E

Manufacturer: China

Specifications:

  • Type: Transistor (NPN Silicon Epitaxial Planar Type)
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Collector Power Dissipation (PC): 625mW
  • Transition Frequency (fT): 250MHz
  • DC Current Gain (hFE): 120-400
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

The KTD-4021E is an NPN silicon epitaxial planar transistor designed for general-purpose amplification and switching applications. It offers high current gain and fast switching speeds, making it suitable for low-power circuits.

Features:

  • High DC current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Compact TO-92 package for easy PCB mounting
  • Suitable for audio amplification and signal processing

This transistor is commonly used in consumer electronics, small signal amplification, and switching circuits.

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