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BSS84-7-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS84-7-FDIODES26315Yes

BSS84-7-F** is a P-channel enhancement mode MOSFET manufactured by **DIODES Incorporated**.

The BSS84-7-F is a P-channel enhancement mode MOSFET manufactured by DIODES Incorporated.

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -50V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -130mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 10Ω (max) @ VGS = -10V, ID = -50mA
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Package: SOT-23 (3-Pin)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The BSS84-7-F is a small-signal P-channel MOSFET designed for low-power switching applications. It features low threshold voltage and is suitable for use in portable electronics, battery management, and load switching circuits.

Features:

  • Low Threshold Voltage for compatibility with logic-level signals
  • Compact SOT-23 Package for space-constrained designs
  • Low On-Resistance for efficient power handling
  • RoHS Compliant & Halogen-Free

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official DIODES Incorporated documentation.

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