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DMG1012T-7 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DMG1012T-7DIODES5757Yes

DMG1012T-7 is a dual N-channel MOSFET manufactured by DIODES Incorporated.

The DMG1012T-7 is a dual N-channel MOSFET manufactured by DIODES Incorporated.

Specifications:

  • Configuration: Dual N-Channel
  • Drain-Source Voltage (VDS): 20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): 4.3A (per MOSFET)
  • Pulsed Drain Current (IDM): 20A
  • On-Resistance (RDS(ON)): 30mΩ (max) at VGS = 4.5V
  • Power Dissipation (PD): 1.1W (per MOSFET)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-563 (6-pin)

Descriptions:

The DMG1012T-7 is a high-performance dual N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching, making it suitable for load switching, power distribution, and DC-DC conversion.

Features:

  • Low threshold voltage
  • Low gate charge
  • High current handling capability
  • Lead-free and RoHS compliant
  • Halogen-free

This device is commonly used in portable electronics, battery management, and power supply circuits.

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