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DMN3032LE-13 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DMN3032LE-13DIODES10000Yes

DMN3032LE-13 is an N-channel MOSFET manufactured by DIODES Incorporated.

The DMN3032LE-13 is an N-channel MOSFET manufactured by DIODES Incorporated. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 5.8A
  • Pulsed Drain Current (IDM): 20A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • RDS(ON) (Max): 28mΩ @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (Min) – 2.5V (Max)
  • Input Capacitance (Ciss): 750pF (Typ)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Description:

The DMN3032LE-13 is a low-voltage, N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, DC-DC converters, and motor control.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Fast switching speed
  • High current handling capability
  • Lead-free and RoHS compliant
  • Available in a compact SOT-23 package

For detailed electrical characteristics and application notes, refer to the official datasheet from DIODES Incorporated.

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