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FMMT458TA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FMMT458TADIODES15000Yes

FMMT458TA is a PNP bipolar junction transistor (BJT) manufactured by DIODES Incorporated.

The FMMT458TA is a PNP bipolar junction transistor (BJT) manufactured by DIODES Incorporated. Below are its specifications, descriptions, and features:

Specifications:

  • Type: PNP Transistor
  • Collector-Emitter Voltage (VCEO): -30V
  • Collector-Base Voltage (VCBO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -200mA
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 100 to 400 (at IC = -10mA, VCE = -5V)
  • Transition Frequency (fT): 200MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23

Description:

The FMMT458TA is a high-performance PNP transistor designed for general-purpose amplification and switching applications. It offers a high current gain and fast switching speed, making it suitable for low-power circuits.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Small SOT-23 package for space-constrained designs
  • RoHS compliant

This information is based on DIODES Incorporated's official datasheet. For detailed performance characteristics, refer to the manufacturer's documentation.

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