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EL357N(C)(TA)-G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
EL357N(C)(TA)-GEVERLIGHT170000Yes

EL357N(C)(TA)-G is a phototransistor optocoupler manufactured by EVERLIGHT.

The EL357N(C)(TA)-G is a phototransistor optocoupler manufactured by EVERLIGHT. Below are its key specifications, descriptions, and features:

Specifications:

  • Isolation Voltage: 5000 Vrms
  • Collector-Emitter Voltage (VCEO): 30 V
  • Emitter-Collector Voltage (VECO): 5 V
  • Collector Current (IC): 50 mA
  • Power Dissipation (PD): 100 mW
  • Current Transfer Ratio (CTR): 50% (Min) at IF = 5 mA, VCE = 5 V
  • Operating Temperature Range: -55°C to +110°C
  • Storage Temperature Range: -55°C to +125°C
  • Rise Time (tr): 4 μs (Typ)
  • Fall Time (tf): 3 μs (Typ)
  • Package Type: DIP-4

Description:

The EL357N(C)(TA)-G is a high-reliability optocoupler consisting of an infrared LED and a silicon phototransistor. It provides electrical isolation between input and output circuits, making it suitable for signal transmission in high-voltage environments.

Features:

  • High isolation voltage (5000 Vrms)
  • Compact DIP-4 package
  • Fast response time
  • High current transfer ratio (CTR)
  • Wide operating temperature range
  • Lead-free and RoHS compliant

This optocoupler is commonly used in power supply feedback, industrial control systems, and communication interfaces where electrical isolation is required.

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