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2SJ112 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SJ112FAI1981Yes

2SJ112** is a P-channel MOSFET manufactured by **FAI (Fairchild Semiconductor International)**.

The 2SJ112 is a P-channel MOSFET manufactured by FAI (Fairchild Semiconductor International). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5A
  • Pulsed Drain Current (IDM): -20A
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 0.15Ω (max) at VGS = -10V
  • Gate Threshold Voltage (VGS(th)): -1V to -3V
  • Input Capacitance (Ciss): 300pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220AB

Descriptions:

  • Designed for low-voltage, high-speed switching applications.
  • Suitable for power management, motor control, and DC-DC converters.
  • Features low on-resistance for improved efficiency.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy rated for robustness.
  • Lead-free and RoHS compliant.

This MOSFET is commonly used in battery-powered circuits, power supplies, and automotive applications.

(Note: Always verify datasheet details for exact parameters.)

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