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E13005-2 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
E13005-2FAI150Yes

E13005-2 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by FAI Electronics.

The E13005-2 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by FAI Electronics.

Manufacturer Specifications (FAI Electronics):

  • Type: NPN BJT
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 700V
  • Emitter-Base Voltage (VEBO): 9V
  • Collector Current (IC): 4A
  • Power Dissipation (PD): 50W
  • DC Current Gain (hFE): 8-40
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

The E13005-2 is designed for high-voltage switching applications, commonly used in power supplies, inverters, and electronic ballasts. It features a high breakdown voltage and robust current handling capability.

Features:

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage
  • TO-220 package for efficient heat dissipation
  • Suitable for high-power applications

This transistor is a reliable choice for industrial and consumer electronics requiring high-voltage switching performance.

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