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IRF634B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF634BFAI100Yes

IRF634B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor).

The IRF634B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor).

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 250V
  • Continuous Drain Current (ID): 8.1A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 75W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.6Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 600pF
  • Output Capacitance (Coss): 180pF
  • Reverse Transfer Capacitance (Crss): 50pF
  • Turn-On Delay Time (td(on)): 15ns
  • Turn-Off Delay Time (td(off)): 55ns
  • Package: TO-220

Descriptions and Features:

  • Designed for high-speed switching applications.
  • Low gate charge for improved efficiency.
  • Rugged and reliable performance in power circuits.
  • Suitable for switching power supplies, motor control, and DC-DC converters.
  • Avalanche energy specified for robustness in inductive load applications.

This MOSFET is commonly used in power electronics where high voltage and current handling are required.

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