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KSP10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KSP10FAI213Yes

part **KSP10** is manufactured by **FAIRCHILD**.

The part KSP10 is manufactured by FAIRCHILD. Below are the specifications, descriptions, and features based on the available knowledge:

Specifications:

  • Type: NPN Silicon Planar Epitaxial Transistor
  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 100 (minimum)
  • Transition Frequency (fT): 50MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Description:

The KSP10 is a general-purpose NPN transistor designed for amplification and switching applications. It is suitable for low-power circuits and offers good linearity and high-speed performance.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Epitaxial planar construction for improved performance
  • Suitable for small-signal amplification and driver stages

For exact datasheet details, refer to the official FAIRCHILD documentation.

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