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MAN6660 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
MAN6660Fairchild120Yes

Part Number:** MAN6660 **Manufacturer:** Fairchild ### **Specifications:** - **Type:** N-Channel Enhancement Mode Vertical DMOS FET - **Drain-Source Voltage (VDSS):** 60V - **Gate-Source Voltage (VGSS):** ±20V - **Cont

Part Number: MAN6660

Manufacturer: Fairchild

Specifications:

  • Type: N-Channel Enhancement Mode Vertical DMOS FET
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGSS): ±20V
  • Continuous Drain Current (ID): 5A
  • Pulsed Drain Current (IDM): 20A
  • Total Power Dissipation (PD): 40W
  • On-Resistance (RDS(on)): 0.4Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 3V
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 80pF (typ)
  • Reverse Transfer Capacitance (Crss): 30pF (typ)
  • Operating Temperature Range: -55°C to +150°C

Descriptions and Features:

  • Designed for high-speed switching applications.
  • Low gate charge for improved efficiency.
  • Fast switching times (low td(on) and td(off)).
  • Avalanche energy rated for rugged performance.
  • Suitable for power management, motor control, and DC-DC converters.
  • TO-220 package for easy mounting and heat dissipation.

(Note: Always verify datasheet details for exact application conditions.)

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