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FDR8308P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDR8308PFSC1950Yes

FDR8308P** from Fairchild Semiconductor is a high-performance **P-Channel PowerTrench® MOSFET** designed for efficient power management in a variety of electronic applications.

The FDR8308P from Fairchild Semiconductor is a high-performance P-Channel PowerTrench® MOSFET designed for efficient power management in a variety of electronic applications. This component is optimized for low on-resistance (RDS(on)) and fast switching, making it ideal for power supply circuits, DC-DC converters, and motor control systems.

With a -30V drain-source voltage (VDSS) and a continuous drain current (ID) of -8.5A, the FDR8308P delivers reliable performance in compact designs. Its advanced PowerTrench® technology enhances thermal efficiency and reduces conduction losses, contributing to improved energy efficiency in power-sensitive applications.

The MOSFET features a low gate charge (QG) and low threshold voltage (VGS(th)), ensuring smooth operation in switching circuits. Its TO-252 (DPAK) package provides excellent thermal dissipation while maintaining a small footprint, making it suitable for space-constrained PCB layouts.

Engineers favor the FDR8308P for its robustness, low power dissipation, and compatibility with modern power electronics. Whether used in battery management, load switching, or voltage regulation, this MOSFET offers a reliable solution for demanding power control applications.

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