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The FDS6690S is a N-channel PowerTrench MOSFET manufactured by Fairchild Semiconductor (FSC). Below are the factual details about its specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (V_DS): 30V
• Continuous Drain Current (I_D): 13A
• Pulsed Drain Current (I_DM): 52A
• Power Dissipation (P_D): 2.5W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)):
• 9.5mΩ (V_GS = 10V)
• 11mΩ (V_GS = 4.5V)
• Threshold Voltage (V_GS(th)): 1V (min), 2V (max)
• Total Gate Charge (Q_g): 18nC (V_GS = 10V)
• Input Capacitance (C_iss): 1500pF
• Output Capacitance (C_oss): 500pF
• Reverse Transfer Capacitance (C_rss): 100pF
• Operating Temperature Range: -55°C to +150°C

Description:

The FDS6690S is a high-performance N-channel MOSFET utilizing Fairchild's advanced PowerTrench process, designed for low on-resistance and fast switching in power management applications. It is suitable for DC-DC converters, motor control, and load switching.

Features:

• Low On-Resistance: Optimized for high-efficiency power conversion.
• Fast Switching: Low gate charge and capacitances for improved switching performance.
• PowerTrench Technology: Enhances thermal performance and reduces conduction losses.
• Avalanche Energy Rated: Provides robustness in high-energy transient conditions.
• Lead-Free & RoHS Compliant: Meets environmental standards.

The FDS6690S is available in an SO-8 package.