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FT5759M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FT5759MFUJ363Yes

Manufacturer:** FUJ **Part Number:** FT5759M ### **Specifications:** - **Type:** High-frequency transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Emitter Voltage (Vceo):** 30V - **Maximum Collector Current

Manufacturer: FUJ

Part Number: FT5759M

Specifications:

  • Type: High-frequency transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Emitter Voltage (Vceo): 30V
  • Maximum Collector Current (Ic): 1A
  • Power Dissipation (Pd): 1W
  • Transition Frequency (ft): 300MHz
  • Gain Bandwidth Product: High-frequency operation
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The FT5759M is a high-frequency NPN transistor designed for amplification and switching applications in RF and general-purpose circuits. It is suitable for low-power, high-speed operations.

Features:

  • High transition frequency (ft) for RF applications
  • Low noise performance
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting
  • Reliable silicon construction

This transistor is commonly used in radio frequency (RF) circuits, oscillators, and signal amplification stages.

(Note: Always refer to the official datasheet for precise specifications and application guidelines.)

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