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FT5770M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FT5770MFUJ135Yes

Manufacturer:** FUJ **Part Number:** FT5770M ### **Specifications:** - **Type:** High-frequency transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Base Voltage (V_CBO):** 60V - **Maximum Collector-Emitter V

Manufacturer: FUJ

Part Number: FT5770M

Specifications:

  • Type: High-frequency transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (V_CBO): 60V
  • Maximum Collector-Emitter Voltage (V_CEO): 50V
  • Maximum Emitter-Base Voltage (V_EBO): 5V
  • Collector Current (I_C): 1A
  • Power Dissipation (P_D): 1W
  • Transition Frequency (f_T): 300MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The FT5770M is a high-frequency NPN bipolar junction transistor (BJT) designed for amplification and switching applications in electronic circuits. It is commonly used in RF (radio frequency) and general-purpose amplification due to its high transition frequency.

Features:

  • High-frequency performance (up to 300MHz)
  • Low noise characteristics
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting
  • Reliable silicon construction for stable operation

This information is based on standard manufacturer specifications. For exact performance characteristics, refer to the official datasheet.

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