Professional IC Distribution & Technical Solutions

The MB81C4256A-70PSZ is a high-speed CMOS static RAM (SRAM) manufactured by FUJITSU (FUJ). Below are its key specifications, descriptions, and features:

Specifications:

• Type: 256K-bit (32K x 8-bit) Static RAM
• Technology: High-speed CMOS
• Access Time: 70 ns
• Operating Voltage: 5V ±10%
• Package: 24-pin Plastic SOP (PSZ)
• Operating Temperature Range: 0°C to +70°C (Commercial Grade)
• Standby Current (Max): 10 μA (TTL level)
• Active Current (Max): 80 mA (at 70 ns access time)
• Data Retention Voltage: 2V (min)
• Tri-State Outputs: Yes

Descriptions:

• The MB81C4256A-70PSZ is a low-power, high-performance SRAM designed for applications requiring fast access times and battery backup capability.
• It features a common I/O structure, simplifying interfacing with microprocessors.
• The device is compatible with TTL levels and includes a chip enable (CE) input for power-down mode.

Features:

• High-speed access time: 70 ns
• Low power consumption:
• Active current: 80 mA (max)
• Standby current: 10 μA (max, TTL level)
• Fully static operation: No clock or refresh required
• Single 5V power supply
• TTL-compatible inputs/outputs
• Three-state outputs for bus-oriented applications
• Battery backup capability (data retention at 2V)
• 24-pin SOP package for space-saving designs

This SRAM is suitable for embedded systems, industrial controls, telecommunications, and battery-backed memory applications.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application notes.)*