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MB8464-15L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB8464-15LFUJ130Yes

Manufacturer:** FUJ **Part Number:** MB8464-15L **Specifications:** - **Type:** Static RAM (SRAM) - **Capacity:** 64Kb (8K x 8-bit) - **Access Time:** 150ns - **Operating Voltage:** 5V - **Package:** 28-pin DIP (Dual In-line Package) -

Manufacturer: FUJ

Part Number: MB8464-15L

Specifications:

  • Type: Static RAM (SRAM)
  • Capacity: 64Kb (8K x 8-bit)
  • Access Time: 150ns
  • Operating Voltage: 5V
  • Package: 28-pin DIP (Dual In-line Package)
  • Operating Temperature Range: Commercial (0°C to +70°C)

Descriptions:

The MB8464-15L is a high-speed CMOS static RAM designed for applications requiring fast access times and low power consumption. It features a standard 8-bit parallel interface and is compatible with TTL levels.

Features:

  • Low power standby current
  • Fully static operation (no clock or refresh required)
  • Single 5V power supply
  • TTL-compatible inputs and outputs
  • High reliability and endurance

This information is strictly factual and based on standard specifications for the MB8464-15L SRAM by FUJ.

# MB8464-15L: Technical Analysis and Implementation Considerations

## Practical Application Scenarios

The MB8464-15L is a 64Kb (8K × 8) low-power static random-access memory (SRAM) manufactured by Fujitsu, designed for applications requiring high reliability and low power consumption. Its key characteristics—15ns access time and a wide operating voltage range (4.5V to 5.5V)—make it suitable for several critical use cases:

1. Embedded Systems and Microcontroller-Based Designs: The MB8464-15L is often employed as external SRAM for microcontrollers lacking sufficient on-chip memory. Its fast access time ensures minimal latency in real-time control systems, such as industrial automation or robotics.

2. Legacy System Upgrades: Due to its compatibility with 5V logic levels, this SRAM is ideal for retrofitting older systems where modern low-voltage memories cannot be used without level shifting.

3. Battery-Powered Devices: The component’s low standby current (typically 10µA) makes it suitable for portable or battery-operated equipment, such as medical devices or handheld test instruments, where power efficiency is critical.

4. Cache Memory in High-Speed Systems: In applications requiring rapid data access, such as networking hardware or FPGA-based designs, the MB8464-15L serves as an effective cache buffer due to its 15ns response time.

## Common Design-Phase Pitfalls and Avoidance Strategies

Pitfall 1: Incorrect Voltage Supply Margin

The MB8464-15L operates within a 4.5V–5.5V range. Designers may inadvertently expose it to voltages outside this range, risking data corruption or device failure.

Solution: Implement robust power supply filtering and voltage monitoring circuits to ensure stable operation. Use decoupling capacitors (0.1µF ceramic) near the VCC pin to mitigate noise.

Pitfall 2: Improper Signal Integrity Management

High-speed access (15ns) demands careful PCB layout to prevent signal degradation, especially in systems with long trace lengths or high-frequency noise.

Solution:

  • Route address and data lines as matched-length traces to minimize skew.
  • Avoid crossing clock or high-speed signals near SRAM lines to reduce crosstalk.

Pitfall 3: Inadequate Thermal Management

While the MB8464-15L has low power dissipation, prolonged operation in high-temperature environments (e.g., industrial settings) can affect reliability.

Solution: Ensure proper airflow or heat sinking if ambient temperatures exceed 70°C. Derate performance specifications as per the datasheet guidelines.

## Key Technical Considerations for Implementation

1. Interface Compatibility: Verify compatibility with the host microcontroller’s bus timing. The 15ns access time may require wait states in slower systems.

2. Memory Expansion: For larger memory requirements, multiple MB8464-15L devices can be bank-switched using address decoding logic (e.g., 74HC138).

3. Data Retention: In battery-backed applications, ensure the SRAM’s data retention voltage (typically 2V) is maintained during power loss.

4. ESD Protection: Although the device includes basic ESD protection, additional transient voltage suppressors (TVS diodes) are recommended for harsh environments.

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