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FST202Z10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FST202Z10FUJI442Yes

FST202Z10** is a power semiconductor module manufactured by **FUJI Electric**.

The FST202Z10 is a power semiconductor module manufactured by FUJI Electric. Below are its specifications, descriptions, and features:

Specifications:

  • Type: IGBT Module (Insulated Gate Bipolar Transistor)
  • Voltage Rating: 1200V
  • Current Rating: 200A
  • Configuration: Dual IGBT with freewheeling diode
  • Package Type: Module (standard power semiconductor package)
  • Mounting Style: Screw or press-fit terminals
  • Isolation Voltage: Typically 2500V or higher (refer to datasheet for exact value)

Descriptions:

  • Designed for high-power switching applications such as motor drives, inverters, and industrial power supplies.
  • Includes built-in anti-parallel diodes for freewheeling current protection.
  • Suitable for high-frequency switching due to low switching losses.

Features:

  • Low Saturation Voltage: Enhances efficiency in conduction mode.
  • High Short-Circuit Withstand Capability: Improves reliability in fault conditions.
  • Low Thermal Resistance: Optimized for heat dissipation.
  • High Isolation: Ensures safe operation in high-voltage systems.

For detailed electrical characteristics and mechanical dimensions, refer to the official FUJI Electric datasheet for the FST202Z10.

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