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MB85RC16VPNF-G-JNE Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RC16VPNF-G-JNEFujitsu1150Yes

MB85RC16VPNF-G-JNE** is a FRAM (Ferroelectric Random Access Memory) device manufactured by **Fujitsu**.

The MB85RC16VPNF-G-JNE is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: FRAM (Non-volatile)
  • Density: 16 Kbit (2 K × 8 bits)
  • Interface: I²C (Two-wire serial interface)
  • Operating Voltage: 2.7 V to 5.5 V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Package: 8-pin SOP (Plastic Small Outline Package)
  • Access Time: 400 kHz (I²C Fast Mode)

Descriptions:

  • The MB85RC16VPNF-G-JNE is a high-performance FRAM that combines the benefits of RAM (fast read/write) and non-volatile memory (data retention without power).
  • It uses Fujitsu’s proprietary ferroelectric process technology, offering high-speed writes, low power consumption, and high reliability.
  • The I²C interface allows easy integration with microcontrollers and other digital systems.

Features:

  • Fast Write Speed: No write delay compared to EEPROM or Flash.
  • High Endurance: Supports 10 trillion read/write cycles, far exceeding EEPROM or Flash.
  • Low Power Consumption: Ideal for battery-powered applications.
  • Non-volatile Data Retention: Maintains data without power.
  • Industrial Temperature Range: Suitable for harsh environments.
  • RoHS Compliant: Lead-free and environmentally friendly.

This FRAM is commonly used in applications requiring frequent data writes, such as data logging, metering, industrial control, and automotive systems.

Would you like additional details on pin configurations or application notes?

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