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MB85RC256VPNF-G-JNERE1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RC256VPNF-G-JNERE1FUJITSU5970Yes

MB85RC256VPNF-G-JNERE1** is a FRAM (Ferroelectric Random Access Memory) device manufactured by **Fujitsu**.

The MB85RC256VPNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: FRAM (Non-volatile)
  • Memory Size: 256 Kbit (32K × 8-bit)
  • Interface: I²C (Two-wire Serial Interface)
  • Operating Voltage: 3.0V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Package: 8-pin SOP (Small Outline Package)
  • Speed: 400 kHz (Fast-mode I²C)
  • Low Power Consumption:
  • Active Current: 130 µA (Typical)
  • Standby Current: 10 µA (Typical)

Descriptions:

  • Non-volatile Memory: Retains data without power, similar to EEPROM or Flash, but with faster write speeds and higher endurance.
  • High-Speed Write Performance: No write delays (unlike EEPROM/Flash).
  • I²C-Compatible Interface: Supports standard two-wire serial communication.
  • Industrial-Grade Reliability: Suitable for harsh environments with extended temperature ranges.

Features:

  • Ultra-High Endurance: Supports frequent read/write operations without degradation.
  • Fast Write Speed: Near-instant writes (no erase-before-write needed).
  • Low Power Operation: Ideal for battery-powered applications.
  • Hardware Write Protection: Supports WP (Write Protect) pin for data security.
  • RoHS Compliant: Meets environmental standards.

This FRAM is commonly used in applications requiring frequent data logging, real-time system monitoring, and embedded systems where fast, reliable non-volatile memory is critical.

For further details, refer to the official Fujitsu datasheet.

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