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IRFD120 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFD120GE368Yes

IRFD120 is a power MOSFET manufactured by HARRIN.

The IRFD120 is a power MOSFET manufactured by HARRIN. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Specifications:

  • Manufacturer: HARRIN
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 1A
  • Pulsed Drain Current (IDM): 4A
  • Power Dissipation (PD): 1W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3Ω (max)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 50pF
  • Output Capacitance (Coss): 20pF
  • Reverse Transfer Capacitance (Crss): 5pF
  • Turn-On Delay Time (td(on)): 10ns
  • Turn-Off Delay Time (td(off)): 30ns
  • Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

  • Designed for low-power switching applications.
  • Fast switching speed suitable for high-frequency circuits.
  • Low gate drive requirements.
  • TO-252 (DPAK) package for efficient heat dissipation.
  • Suitable for DC-DC converters, motor control, and power management circuits.

This information is based solely on the available Manufactor Datasheet.

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