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1N5417 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1N5417GI157Yes

1N5417 is a silicon rectifier diode manufactured by General Instrument (GI).

The 1N5417 is a silicon rectifier diode manufactured by General Instrument (GI). It is designed for general-purpose rectification applications. Key specifications include:

  • Maximum Average Forward Current (IF(AV)): 3.0 A
  • Peak Forward Surge Current (IFSM): 100 A (non-repetitive)
  • Maximum Reverse Voltage (VR): 200 V
  • Forward Voltage Drop (VF): 1.1 V (typical at 3.0 A)
  • Reverse Recovery Time (trr): 500 ns (typical)
  • Operating Junction Temperature (TJ): -65°C to +175°C
  • Package: DO-4 (stud mount)

These specifications are typical for the 1N5417 diode as provided by General Instrument.

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