Professional IC Distribution & Technical Solutions

The IRF9622 is a P-channel Power MOSFET manufactured by Harris Semiconductor (now part of Littelfuse). Below are the factual specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (V_DSS): -200V
• Continuous Drain Current (I_D): -4.5A
• Pulsed Drain Current (I_DM): -18A
• Power Dissipation (P_D): 50W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 3.5Ω (max) @ V_GS = -10V
• Threshold Voltage (V_GS(th)): -2V to -4V
• Input Capacitance (C_iss): 300pF (typ)
• Output Capacitance (C_oss): 70pF (typ)
• Reverse Transfer Capacitance (C_rss): 15pF (typ)
• Turn-On Delay Time (t_d(on)): 20ns (typ)
• Turn-Off Delay Time (t_d(off)): 60ns (typ)
• Operating Temperature Range: -55°C to +150°C

Description:

The IRF9622 is a high-voltage P-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high ruggedness, making it suitable for use in power supplies, motor control, and other high-voltage circuits.

Features:

• High Voltage Capability: Supports up to -200V drain-source voltage.
• Low On-Resistance: Ensures efficient power handling.
• Fast Switching: Optimized for high-speed applications.
• Avalanche Energy Rated: Enhances reliability in harsh conditions.
• TO-220 Package: Provides robust thermal performance.

For detailed application notes or additional parameters, refer to the official datasheet from Harris/Littelfuse.