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IRFD120R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFD120RHARRIS320Yes

IRFD120R is a power MOSFET manufactured by Harris Semiconductor (now part of Littelfuse).

The IRFD120R is a power MOSFET manufactured by Harris Semiconductor (now part of Littelfuse). Below are its factual specifications, descriptions, and features:

Manufacturer: Harris Semiconductor (now Littelfuse)

Part Number: IRFD120R

Type: N-Channel Power MOSFET

Key Specifications:

  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 1.2A
  • Pulsed Drain Current (IDM): 4.8A
  • Power Dissipation (PD): 1W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 30pF (typical)
  • Output Capacitance (Coss): 10pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)

Package: TO-252 (DPAK)

Features:

  • N-Channel Enhancement Mode MOSFET
  • Low Threshold Voltage
  • Fast Switching Speed
  • Low Input Capacitance
  • Avalanche Energy Rated

Applications:

  • Power Switching Circuits
  • DC-DC Converters
  • Motor Control
  • Load Switching

This information is based on the manufacturer's datasheet and technical specifications. For detailed performance characteristics, refer to the official documentation.

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