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2SD787 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD787HIT109Yes

2SD787** is a high-power NPN bipolar junction transistor (BJT) manufactured by **Hitachi (HIT)**.

The 2SD787 is a high-power NPN bipolar junction transistor (BJT) manufactured by Hitachi (HIT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 150V
  • Maximum Collector-Emitter Voltage (VCE): 150V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 8A (continuous)
  • Collector Dissipation (PC): 80W
  • DC Current Gain (hFE): 40 to 320 (varies with operating conditions)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220 (plastic-molded, 3-pin)

Descriptions & Features:

  • Designed for high-power amplification and switching applications.
  • Suitable for audio amplifiers, power regulators, and motor control circuits.
  • Low saturation voltage, improving efficiency in switching applications.
  • High current and voltage handling capability.
  • Complementary PNP transistor: 2SB737 (for push-pull configurations).
  • Robust construction with TO-220 package for effective heat dissipation.

This transistor is commonly used in industrial and consumer electronics where high power handling is required.

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