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4AM13 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
4AM13HIT250Yes

4AM13** is a high-frequency transistor manufactured by **HIT (Hitachi)**.

The 4AM13 is a high-frequency transistor manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-frequency amplification, RF applications
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 300mW
  • Transition Frequency (fT): 1GHz (min)
  • Noise Figure (NF): Low noise characteristics
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • Designed for VHF/UHF amplification in communication devices.
  • Suitable for low-noise, high-gain applications.
  • Encased in a TO-92 package for easy mounting.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise performance, ideal for signal amplification.
  • Compact and reliable for consumer and industrial electronics.

For exact performance curves and detailed electrical characteristics, refer to the official HIT datasheet.

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