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HN613128PD11 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HN613128PD11HIT320Yes

Manufacturer:** HIT (Hitachi) **Part Number:** HN613128PD11 **Specifications:** - **Type:** SRAM (Static Random-Access Memory) - **Density:** 128Kb (16K x 8-bit) - **Voltage Supply:** 5V ±10% - **Access Time:** 70ns (max) - **Operating T

Manufacturer: HIT (Hitachi)

Part Number: HN613128PD11

Specifications:

  • Type: SRAM (Static Random-Access Memory)
  • Density: 128Kb (16K x 8-bit)
  • Voltage Supply: 5V ±10%
  • Access Time: 70ns (max)
  • Operating Temperature Range: 0°C to +70°C
  • Package: 28-pin DIP (Dual In-line Package)
  • Interface: Parallel
  • Standby Current: 10μA (typical)

Descriptions:

The HN613128PD11 is a high-speed CMOS static RAM designed for applications requiring fast data access and low power consumption. It features a non-multiplexed address and data bus, making it compatible with various microprocessors.

Features:

  • Fully static operation (no clock or refresh required)
  • Low power consumption in standby mode
  • TTL-compatible inputs and outputs
  • Single 5V power supply
  • High noise immunity
  • Industrial-grade reliability

This part is commonly used in embedded systems, industrial controls, and legacy computing applications.

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