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2SA1029 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1029HIT1009Yes

2SA1029** is a PNP bipolar junction transistor (BJT) manufactured by **Hitachi (HIT)**.

The 2SA1029 is a PNP bipolar junction transistor (BJT) manufactured by Hitachi (HIT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (Vcb): -50V
  • Maximum Collector-Emitter Voltage (Vce): -50V
  • Maximum Emitter-Base Voltage (Veb): -5V
  • Collector Current (Ic): -1.5A
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (ft): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

  • The 2SA1029 is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications.
  • It is commonly used in audio amplifiers, power regulation circuits, and driver stages.

Features:

  • High Voltage Capability: Suitable for circuits requiring up to 50V.
  • Good Current Gain: Wide hFE range for stable amplification.
  • Fast Switching Speed: Transition frequency of 150MHz ensures efficient performance in high-frequency applications.
  • Compact TO-92 Package: Easy to integrate into various circuit designs.

This transistor is a reliable choice for low to medium power applications where PNP functionality is required.

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