Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > HIT02 > 2SA1379

2SA1379 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1379HIT500Yes

2SA1379** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SA1379 is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • High current gain (hFE) range for improved performance in amplification.

Features:

  • High Voltage Capability: Supports up to -50V across collector and emitter.
  • High Current Handling: Can manage up to -1.5A collector current.
  • Fast Switching Speed: Transition frequency of 100MHz ensures good high-frequency response.
  • Reliable Performance: Robust construction for stable operation in various conditions.

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 2SD468C ,331,TO92

    2SD468C** is a silicon NPN transistor manufactured by **Hitachi (HIT)**.

  • A16664APS ,135,DIP8

    Part Number:** A16664APS **Manufacturer:** HIT ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 170A - **Pulsed Drain Current (IDM):**

  • HA12442V ,290,ZIP16

    HA12442V** is a hybrid integrated circuit (HIC) manufactured by **HIT (Hitachi)**.

  • STLC5411P,ST,26,DIP28

    TBP28L46N,TI,26,DIP24

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales