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2SA1379 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1379HIT500Yes

2SA1379** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SA1379 is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • High current gain (hFE) range for improved performance in amplification.

Features:

  • High Voltage Capability: Supports up to -50V across collector and emitter.
  • High Current Handling: Can manage up to -1.5A collector current.
  • Fast Switching Speed: Transition frequency of 100MHz ensures good high-frequency response.
  • Reliable Performance: Robust construction for stable operation in various conditions.

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

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