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2SC1890E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1890EHIT500Yes

2SC1890E** is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SC1890E is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (Vcb): 30V
  • Maximum Collector-Emitter Voltage (Vce): 20V
  • Maximum Emitter-Base Voltage (Veb): 3V
  • Maximum Collector Current (Ic): 50mA
  • Power Dissipation (Pc): 300mW
  • Transition Frequency (ft): 600MHz (min)
  • Noise Figure (NF): 1.5dB (typical) at 100MHz
  • DC Current Gain (hFE): 30–200 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Optimized for low-noise performance, making it suitable for sensitive signal processing.
  • Commonly used in RF amplifiers, oscillators, and mixer circuits.
  • Available in TO-92 package for easy PCB mounting.

Features:

  • Low noise figure for improved signal clarity.
  • High transition frequency (ft) for stable high-frequency operation.
  • Reliable performance in RF and communication circuits.
  • Compact and widely compatible with standard circuit designs.

This transistor is ideal for applications requiring low-noise amplification in the VHF/UHF range, such as radio receivers and communication systems.

Would you like additional details on pin configuration or equivalent alternatives?

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