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2SC2470 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2470HIT148Yes

2SC2470** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **Hitachi (HIT)**.

The 2SC2470 is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Hitachi (HIT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 40V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PC): 300mW
  • Transition Frequency (fT): 200MHz (min)
  • Noise Figure (NF): 3dB (typical at 1GHz)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • The 2SC2470 is designed for high-frequency amplification in RF and VHF applications.
  • It is commonly used in oscillators, mixers, and RF amplifiers due to its low noise and high transition frequency.
  • The transistor is housed in a TO-92 package, making it suitable for compact circuit designs.

Features:

  • Low Noise: Suitable for RF signal amplification with minimal distortion.
  • High fT (200MHz): Ensures good performance in high-frequency circuits.
  • Small Package (TO-92): Easy to integrate into PCB designs.
  • Reliable Performance: Manufactured by Hitachi with high-quality standards.

This transistor is ideal for radio communication devices, tuners, and other RF applications. For exact performance characteristics, refer to the official Hitachi datasheet.

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