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2SJ226 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SJ226HIT153Yes

2SJ226 is a P-channel MOSFET manufactured by Hitachi (HIT).

The 2SJ226 is a P-channel MOSFET manufactured by Hitachi (HIT). Here are the key specifications:

  • Drain-Source Voltage (Vds): -60V
  • Gate-Source Voltage (Vgs): ±20V
  • Drain Current (Id): -10A
  • Power Dissipation (Pd): 30W
  • On-Resistance (Rds(on)): 0.3Ω (typical)
  • Gate Threshold Voltage (Vgs(th)): -2V to -4V
  • Input Capacitance (Ciss): 600pF (typical)
  • Operating Temperature Range: -55°C to 150°C

These specifications are based on the datasheet provided by Hitachi for the 2SJ226 MOSFET.

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