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3SK83 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3SK83HIT450Yes

3SK83** is a dual-gate MOSFET manufactured by **HIT (Hitachi)**.

The 3SK83 is a dual-gate MOSFET manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Dual-Gate MOSFET
  • Maximum Drain-Source Voltage (VDS): 15V
  • Maximum Gate-Source Voltage (VGS): ±8V
  • Maximum Drain Current (ID): 30mA
  • Power Dissipation (PD): 150mW
  • Input Capacitance (Ciss): 1.5pF (typical)
  • Forward Transfer Admittance (Yfs): 10mS (typical)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • Designed for RF and VHF applications, including amplifiers and mixers.
  • Features low noise and high gain, making it suitable for weak signal amplification.
  • Dual-gate structure allows for better control and improved performance in RF circuits.

Features:

  • Low noise figure for improved signal clarity.
  • High input impedance for better matching in RF circuits.
  • Compact and reliable for use in communication devices.
  • Suitable for battery-operated applications due to low power consumption.

This MOSFET is commonly used in radio receivers, tuners, and other high-frequency circuits.

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