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A16654APS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
A16654APSHIT337Yes

Part A16654APS Manufacturer: HIT** ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (IDM):** 120A - **Powe

Part A16654APS Manufacturer: HIT

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 8.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 1800pF (typ)
  • Output Capacitance (Coss): 600pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Descriptions:

The A16654APS is an N-Channel MOSFET designed by HIT for high-efficiency power switching applications. It features low on-resistance, fast switching speed, and robust thermal performance, making it suitable for power supplies, motor control, and DC-DC converters.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability (30A continuous, 120A pulsed)
  • Fast switching performance
  • Avalanche energy rated for reliability
  • TO-220 package for easy mounting and heat dissipation
  • Wide operating temperature range (-55°C to +150°C)

This MOSFET is optimized for applications requiring high power efficiency and thermal stability.

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