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A16664APS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
A16664APSHIT135Yes

Part Number:** A16664APS **Manufacturer:** HIT ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 170A - **Pulsed Drain Current (IDM):**

Part Number: A16664APS

Manufacturer: HIT

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 170A
  • Pulsed Drain Current (IDM): 680A
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 1.8mΩ (max) at VGS = 10V
  • Package: TO-247

Descriptions:

The A16664APS is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high current handling, making it suitable for high-efficiency switching circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching performance
  • Robust thermal characteristics
  • Suitable for power supplies, motor control, and DC-DC converters

This MOSFET is optimized for applications requiring high power efficiency and reliability.

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