Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > HIT02 > D476

D476 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D476HIT120Yes

D476** is a high-performance **NPN bipolar junction transistor (BJT)** manufactured by **HIT (Hitachi)**.

The D476 is a high-performance NPN bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Emitter Voltage (VCEO): 60V
  • Maximum Collector-Base Voltage (VCBO): 80V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Power Dissipation (PD): 30W
  • DC Current Gain (hFE): 40 to 320 (depending on operating conditions)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power circuits, including audio amplifiers, power regulators, and motor drivers.
  • Features high current capability and good thermal stability due to its TO-220 package.

Features:

  • High current handling (3A)
  • Low saturation voltage for efficient switching
  • Wide operating temperature range
  • Robust TO-220 package for heat dissipation
  • Good linearity in amplification

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • HD14023BP ,192,DIP14

    HD14023BP** is a triple 3-input NAND gate IC manufactured by **Hitachi (HIT)**.

  • 2SA1030 ,500,TO92

    2SA1030** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

  • A16654APS ,337,DIP8

    Part A16654APS Manufacturer: HIT** ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (IDM):** 120A - **Powe

  • 16194440,DELCO,12,DIP40

    UC80709,UNITRODE,12,DIP16

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales