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HM53461ZP-12 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HM53461ZP-12HIT725Yes

Manufacturer:** HIT (Hyundai Electronics Industries) **Part Number:** HM53461ZP-12 ### **Specifications:** - **Type:** DRAM (Dynamic Random-Access Memory) - **Density:** 4Mbit (1M x 4-bit) - **Organization:** 1,048,576 words × 4 bits - **A

Manufacturer: HIT (Hyundai Electronics Industries)

Part Number: HM53461ZP-12

Specifications:

  • Type: DRAM (Dynamic Random-Access Memory)
  • Density: 4Mbit (1M x 4-bit)
  • Organization: 1,048,576 words × 4 bits
  • Access Time: 120ns
  • Voltage Supply: 5V ±10%
  • Package: 600mil DIP (Dual In-line Package)
  • Operating Temperature Range: 0°C to +70°C

Descriptions:

  • A high-speed, low-power CMOS DRAM chip.
  • Designed for applications requiring moderate memory density and speed.
  • Features a standard asynchronous interface.

Features:

  • Refresh: 4ms (512 cycles)
  • Low Power Consumption: Standby and active power-saving modes.
  • Single 5V Power Supply
  • TTL-Compatible Inputs/Outputs
  • CAS (Column Address Strobe) Before RAS (Row Address Strobe) Refresh

This part is an older-generation DRAM primarily used in legacy computing and embedded systems.

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