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04N03LA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
04N03LAINFIEON149Yes

Infineon 04N03LA** is an N-channel MOSFET transistor.

The Infineon 04N03LA is an N-channel MOSFET transistor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 40A
  • Pulsed Drain Current (IDM): 160A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 83W
  • On-Resistance (RDS(on)): 4.5mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 3V
  • Total Gate Charge (Qg): 45nC (typical)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-252 (DPAK)

Descriptions:

  • The 04N03LA is a power MOSFET designed for high-efficiency switching applications.
  • It is optimized for low on-resistance and fast switching performance.
  • Suitable for DC-DC converters, motor control, and power management applications.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current capability (40A continuous).
  • Fast switching speed for improved efficiency.
  • Avalanche ruggedness for enhanced reliability.
  • Lead-free and RoHS compliant.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications.

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