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BSS84PL6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS84PL6327INFIEON2950Yes

BSS84PL6327** is a P-channel MOSFET manufactured by **Infineon Technologies**.

The BSS84PL6327 is a P-channel MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDS): -50V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -130mA
  • Power Dissipation (Ptot): 250mW
  • On-Resistance (RDS(on)): 10Ω (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Small Outline Transistor)

Descriptions:

The BSS84PL6327 is a small-signal P-channel MOSFET designed for low-power switching applications. It is optimized for high efficiency and low on-resistance, making it suitable for battery-powered circuits, load switching, and signal amplification.

Features:

  • Low Threshold Voltage: Enables operation with low gate drive.
  • Low On-Resistance: Reduces power loss in switching applications.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • RoHS Compliant: Environmentally friendly.

For detailed datasheet information, refer to Infineon’s official documentation.

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