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The IPB100N04S2-04 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features based on factual information from the Manufactor Datasheet:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IPB100N04S2-04
• Transistor Type: N-Channel MOSFET
• Technology: OptiMOS™
• Drain-Source Voltage (V_DS): 40 V
• Continuous Drain Current (I_D): 100 A (at 25°C)
• Pulsed Drain Current (I_DM): 400 A
• Power Dissipation (P_tot): 300 W
• Gate-Source Voltage (V_GS): ±20 V
• On-Resistance (R_DS(on)): 1.4 mΩ (max at V_GS = 10 V)
• Threshold Voltage (V_GS(th)): 2.3 V (typical)
• Input Capacitance (C_iss): 7000 pF (typical)
• Output Capacitance (C_oss): 1100 pF (typical)
• Reverse Transfer Capacitance (C_rss): 200 pF (typical)
• Operating Junction Temperature (T_j): -55°C to +175°C
• Package: TO-263-7 (D2PAK-7)

Descriptions:

• The IPB100N04S2-04 is a high-performance N-Channel MOSFET designed for power switching applications.
• It is part of Infineon’s OptiMOS™ family, optimized for low conduction losses and high efficiency.
• Suitable for DC-DC converters, motor control, and synchronous rectification in industrial and automotive applications.

Features:

• Low on-resistance (R_DS(on)) for reduced conduction losses.
• High current capability (100 A continuous, 400 A pulsed).
• Fast switching performance for improved efficiency.
• Avalanche ruggedness for robust operation.
• Lead-free and RoHS compliant packaging.
• Optimized for high-frequency switching applications.

This information is based solely on the manufacturer’s datasheet and technical documentation.