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IPB100N04S2-04 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPB100N04S2-04INFIEON348Yes

IPB100N04S2-04** is a power MOSFET manufactured by **Infineon Technologies**.

The IPB100N04S2-04 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features based on factual information from the Manufactor Datasheet:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IPB100N04S2-04
  • Transistor Type: N-Channel MOSFET
  • Technology: OptiMOS™
  • Drain-Source Voltage (VDS): 40 V
  • Continuous Drain Current (ID): 100 A (at 25°C)
  • Pulsed Drain Current (IDM): 400 A
  • Power Dissipation (Ptot): 300 W
  • Gate-Source Voltage (VGS): ±20 V
  • On-Resistance (RDS(on)): 1.4 mΩ (max at VGS = 10 V)
  • Threshold Voltage (VGS(th)): 2.3 V (typical)
  • Input Capacitance (Ciss): 7000 pF (typical)
  • Output Capacitance (Coss): 1100 pF (typical)
  • Reverse Transfer Capacitance (Crss): 200 pF (typical)
  • Operating Junction Temperature (Tj): -55°C to +175°C
  • Package: TO-263-7 (D2PAK-7)

Descriptions:

  • The IPB100N04S2-04 is a high-performance N-Channel MOSFET designed for power switching applications.
  • It is part of Infineon’s OptiMOS™ family, optimized for low conduction losses and high efficiency.
  • Suitable for DC-DC converters, motor control, and synchronous rectification in industrial and automotive applications.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses.
  • High current capability (100 A continuous, 400 A pulsed).
  • Fast switching performance for improved efficiency.
  • Avalanche ruggedness for robust operation.
  • Lead-free and RoHS compliant packaging.
  • Optimized for high-frequency switching applications.

This information is based solely on the manufacturer’s datasheet and technical documentation.

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