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P2N04L03 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P2N04L03INFIEON125Yes

P2N04L03** is a power MOSFET manufactured by **Infineon Technologies**.

The P2N04L03 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDS): 40 V
  • Continuous Drain Current (ID): 2 A
  • Pulsed Drain Current (IDM): 8 A
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 2 W
  • On-Resistance (RDS(on)): 0.4 Ω (max) at VGS = 10 V
  • Threshold Voltage (VGS(th)): 1 V (min) to 3 V (max)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for DC-DC converters, motor control, and power management circuits.
  • Low gate charge for fast switching performance.

Features:

  • Low on-resistance for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • Avalanche energy rated for ruggedness in inductive load applications.
  • Lead-free and RoHS compliant.

For exact datasheet details, refer to Infineon’s official documentation.

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