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03N50C3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
03N50C3INFINEON149Yes

03N50C3** is a power MOSFET manufactured by **Infineon Technologies**.

The 03N50C3 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: 03N50C3
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 3A
  • Pulsed Drain Current (IDM): 12A
  • Power Dissipation (PD): 42W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.8Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (typical)
  • Input Capacitance (Ciss): 300pF (typical)
  • Output Capacitance (Coss): 45pF (typical)
  • Reverse Transfer Capacitance (Crss): 10pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Description:

The 03N50C3 is a high-voltage N-Channel MOSFET designed for switching applications. It offers low on-state resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-voltage applications.

Features:

  • High Voltage Capability (500V)
  • Low Gate Charge
  • Fast Switching Speed
  • Low On-Resistance (RDS(on))
  • Avalanche Energy Specified
  • Improved dv/dt Capability
  • TO-220 Package for Easy Mounting

This information is based on Infineon's datasheet for the 03N50C3 MOSFET. For detailed performance characteristics, refer to the official documentation.

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