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BC817-40E6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC817-40E6327INFINEON450Yes

BC817-40E6327** is an NPN bipolar junction transistor (BJT) manufactured by **Infineon Technologies**.

The BC817-40E6327 is an NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 45 V
  • Collector-Base Voltage (VCB): 50 V
  • Emitter-Base Voltage (VEB): 5 V
  • Collector Current (IC): 500 mA
  • Power Dissipation (Ptot): 330 mW
  • DC Current Gain (hFE): 250–600 (at IC = 2 mA, VCE = 5 V)
  • Transition Frequency (fT): 100 MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power and medium-speed switching circuits.
  • RoHS compliant and lead-free.

Features:

  • High current gain (hFE).
  • Low saturation voltage.
  • Compact SOT-23 package for space-constrained applications.
  • Reliable performance in a wide temperature range.

This transistor is commonly used in signal amplification, driver stages, and switching circuits in consumer electronics, industrial controls, and automotive applications.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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