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BC846BE6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC846BE6327INFINEON129Yes

BC846BE6327** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **Infineon Technologies**.

The BC846BE6327 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 65 V
  • Collector-Base Voltage (VCB): 80 V
  • Emitter-Base Voltage (VEB): 6 V
  • Collector Current (IC): 100 mA
  • Power Dissipation (Ptot): 300 mW
  • DC Current Gain (hFE): 200 - 450 (at IC = 2 mA, VCE = 5 V)
  • Transition Frequency (fT): 100 MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • SOT-23 (Small Outline Transistor)

Features:

  • High current gain (hFE)
  • Low noise performance
  • Suitable for switching and amplification applications
  • RoHS compliant

Applications:

  • General-purpose amplification
  • Switching circuits
  • Signal processing
  • Audio amplifiers

This transistor is commonly used in consumer electronics, industrial controls, and communication devices.

*(Note: Always refer to the official Infineon datasheet for detailed electrical characteristics and application guidelines.)*

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