Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > INFINEON > BSC030N08NS5

BSC030N08NS5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSC030N08NS5INFINEON5000Yes

BSC030N08NS5** is a power MOSFET manufactured by **Infineon Technologies**.

The BSC030N08NS5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel MOSFET
  • Technology: OptiMOS™ 5
  • Drain-Source Voltage (VDS): 80 V
  • Continuous Drain Current (ID): 30 A
  • Pulsed Drain Current (IDM): 120 A
  • RDS(on) (Max) @ VGS = 10 V: 3.0 mΩ
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 125 W
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-263 (D2PAK)

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Low on-state resistance (RDS(on)) for reduced conduction losses.
  • Optimized for fast switching performance.
  • Suitable for synchronous rectification in DC-DC converters, motor control, and power management.

Features:

  • Low RDS(on): Enhances efficiency in power conversion.
  • Fast Switching: Minimizes switching losses.
  • High Current Capability: Supports high-load applications.
  • Avalanche Rated: Robust against transient voltage spikes.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications requiring high power density and efficiency.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • IRLML6401TRPBF ,6808,SOT-23(SOT-23-3)ECCN: EAR99

    -12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package

  • BCV27E6327 ,115,SOT23

    BCV27E6327 is a PNP transistor manufactured by Infineon Technologies.

  • TLE4250-2G ,4500,SCT-595-5

    TLE4250-2G** is a low-drop voltage regulator manufactured by **Infineon Technologies**.

  • K24C02D,,52,SOP8

    SVP1556N,CVA,52,DIP8

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales